← 研踪 PaperTrailarXiv:2610.40000 · v1
NORmal: Architecting 3D Ferroelectric NOR Flash as Main Memory -- From Co-Fabricated BEOL Arrays to 200B-Class Multi-Agent LLMs in a Smartphone
首次提交 2026-10-29 21:19
版本更新 2026-10-29 21:19
雷达观测 2026-10-30 13:28
摘要
Smartphone agents increasingly work as teams, in which a large planner directs parallel workers across long sessions. Running such a team on the device requires 200B-class models and contexts that exceed phone DRAM many times over, yet existing tiers treat flash as storage: UFS starves per-token weight streaming, and mobile High-Bandwidth Flash (HBF) needs a redesigned SoC and cannot absorb continuous KV writes. We show that a non-volatile memory can join an unmodified LPDDR6 bus as a plain rank only if its access latency fits the DRAM timing window, a condition no NAND tier meets. We present NORmal, to our knowledge the first main-memory architecture for 3D ferroelectric NOR flash. We have fabricated and experimentally characterized back-end-of-line (BEOL) 3D FeNOR arrays that co-integrate dense 3-bit MLC and fast, high-endurance in-place-writable SLC with sub-7.5 ns sensing. NORmal turns these co-fabricated arrays into a byte-addressable, deterministic-timing load/store rank on an unmodified LPDDR6 interface through an under-array DRAM-emulation bridge, staggered bank reads with zero-cycle weight swizzling, and posted SLC writes. Across this rank and DRAM, NORmal places agent state by mutability and lifetime rather than by hotness, serving 200B-class models and persistent planner contexts in place while dynamically partitioning subchannels across agent phases. In serving-level simulation on production agent traces, NORmal is 8.9$\times$--28.0$\times$ faster than UFS offloading, within 0.4% of an unlimited-DRAM ideal, and 2.8$\times$--6.3$\times$ faster than HBF on sessions beyond 256K tokens, with 8.1$\times$--17.8$\times$ less memory energy per token.
作者备注：13 pages, 12 figures, 2 tables
观测到的版本
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v1 · 2026-10-29 21:19 · 最新观测版本
NORmal: Architecting 3D Ferroelectric NOR Flash as Main Memory -- From Co-Fabricated BEOL Arrays to 200B-Class Multi-Agent LLMs in a Smartphone
Smartphone agents increasingly work as teams, in which a large planner directs parallel workers across long sessions. Running such a team on the device requires 200B-class models and contexts that exceed phone DRAM many times over, yet existing tiers treat flash as storage: UFS starves per-token weight streaming, and mobile High-Bandwidth Flash (HBF) needs a redesigned SoC and cannot absorb continuous KV writes. We show that a non-volatile memory can join an unmodified LPDDR6 bus as a plain rank only if its access latency fits the DRAM timing window, a condition no NAND tier meets. We present NORmal, to our knowledge the first main-memory architecture for 3D ferroelectric NOR flash. We have fabricated and experimentally characterized back-end-of-line (BEOL) 3D FeNOR arrays that co-integrate dense 3-bit MLC and fast, high-endurance in-place-writable SLC with sub-7.5 ns sensing. NORmal turns these co-fabricated arrays into a byte-addressable, deterministic-timing load/store rank on an unmodified LPDDR6 interface through an under-array DRAM-emulation bridge, staggered bank reads with zero-cycle weight swizzling, and posted SLC writes. Across this rank and DRAM, NORmal places agent state by mutability and lifetime rather than by hotness, serving 200B-class models and persistent planner contexts in place while dynamically partitioning subchannels across agent phases. In serving-level simulation on production agent traces, NORmal is 8.9$\times$--28.0$\times$ faster than UFS offloading, within 0.4% of an unlimited-DRAM ideal, and 2.8$\times$--6.3$\times$ faster than HBF on sessions beyond 256K tokens, with 8.1$\times$--17.8$\times$ less memory energy per token.
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